Doping in quantum cascade lasers. I. InAlAs-InGaAs/InP midinfrared devices

被引：49

作者：

Aellen, Thierry ^{[1
]}

Beck, Mattias

Hoyler, Nicolas

Giovannini, Marcella

Faist, Jerome

Gini, Emilio

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

[2] ETH, Ctr Micro & Nanosci 1, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 04期

关键词：

D O I：

10.1063/1.2234804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the doping densities on the performance of 9 mu m InAlAs-InGaAs/InP quantum cascade lasers is presented. Doping densities varying between 1.0x10(11) and 2.6x10(11) cm(-2) were investigated. In this range, a linear increase in both threshold and maximum current density with sheet carrier density is observed. These effects are explained using a model based on resonant tunneling transport and rate equations. (c) 2006 American Institute of Physics.

引用

页数：4

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