Raman modes of 6H polytype of silicon carbide to ultrahigh pressures - Comment

被引：10

作者：

Karch, K

Bechstedt, F

机构：

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.77.1660

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：1660 / 1660

页数：1

相关论文

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