Effective diffusion lengths for minority carriers in solar cells as determined from internal quantum efficiency analysis

被引:20
作者
Brendel, R
Rau, U
机构
[1] ZAE Bayern, Bavarian Ctr Appl Energy Res, D-91058 Erlangen, Germany
[2] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany
关键词
D O I
10.1063/1.369726
中图分类号
O59 [应用物理学];
学科分类号
摘要
We introduce a general relationship between the effective diffusion length L-Q of solar cells derived from spectral quantum efficiency Q and the effective diffusion length L-J that determines the saturation current j(0)=qn(0)D/L-J of the diode in the dark. The general relation L(Q)greater than or equal to L-J holds in the presence of grain boundaries and of spatially nonhomogeneous doping profiles. We find the relation L-Q=L-J for solar cells without potential fluctuations at the collecting junction. (C) 1999 American Institute of Physics. [S0021-8979(99)01707-7].
引用
收藏
页码:3634 / 3637
页数:4
相关论文
共 16 条
[1]   DIFFUSION LENGTH DETERMINATION IN P-N-JUNCTION DIODES AND SOLAR-CELLS [J].
ARORA, ND ;
CHAMBERLAIN, SG ;
ROULSTON, DJ .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :325-327
[2]  
BASORE PA, 1993, IEEE PHOT SPEC CONF, P147, DOI 10.1109/PVSC.1993.347063
[3]   INTERNAL QUANTUM EFFICIENCY OF THIN EPITAXIAL SILICON SOLAR-CELLS [J].
BRENDEL, R ;
HIRSCH, M ;
STEMMER, M ;
RAU, U ;
WERNER, JH .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1261-1263
[4]  
BRENDEL R, 1999, IN PRESS SERIES SOLI
[5]   THE PHYSICS AND MODELING OF HEAVILY DOPED EMITTERS [J].
DELALAMO, JA ;
SWANSON, RM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1878-1888
[6]   A RECIPROCITY THEOREM FOR CHARGE COLLECTION [J].
DONOLATO, C .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :270-272
[7]   Generalized relationship between dark carrier distribution and photocarrier collection in solar cells [J].
Green, MA .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :268-271
[8]   INFLUENCE OF BARRIER INHOMOGENEITIES ON NOISE AT SCHOTTKY CONTACTS [J].
GUTTLER, HH ;
WERNER, JH .
APPLIED PHYSICS LETTERS, 1990, 56 (12) :1113-1115
[9]  
HENISCH HK, 1978, SEMICONDUCTOR CONTAC, P122
[10]  
HIRSCH M, 1995, P 1 WORLD C PHOT EN, P1454