Nucleation of pentacene on silicon dioxide at hyperthermal energies

被引:30
作者
Killampalli, AS [1 ]
Schroeder, TW [1 ]
Engstrom, JR [1 ]
机构
[1] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1990254
中图分类号
O59 [应用物理学];
学科分类号
摘要
The nucleation of pentacene on silicon dioxide, incident at hyperthermal energies, has been investigated with atomic force microscopy. The incident kinetic energy of the pentacene molecules strongly influences the process of adsorption-the adsorption probability decreases with increasing incident energy, indicative of trapping-mediated adsorption. In addition, the trapping probability of pentacene decreases with more glancing angles of incidence, a result inconsistent with so-called normal energy scaling. Analysis of the dependence of the island density on the growth rate in the submonolayer regime indicates that growth at all energies is consistent with a critical cluster containing four molecules. (c) 2005 American Institute of Physics.
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页数:3
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