Substitutional Ge in 3C-SiC

被引:19
作者
Guedj, C [1 ]
Kolodzey, J [1 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
关键词
D O I
10.1063/1.122989
中图分类号
O59 [应用物理学];
学科分类号
摘要
The incorporation of substitutional Ge into 3C-SiC alloys is studied theoretically with an anharmonic Keating model specifically adapted to the computation of the structural properties and the lattice dynamics of Si1-x-yGexCy alloys. Basic energy calculations show that the substitution of Si by Ge is more probable than the substitution of C by Ge in the zinc-blende silicon carbide crystal. If Ge replaces only Si, then the lattice parameter equals (0.43593+/-0.00002) + ( 0.000337 +/- 0.000002) y, where y stands for the Ge content. Hence, Vegard's law is not applicable. The alloy is characterized by a distinct phonon spectrum whose maximum peak position in cm(-1) is best described by the exponential decay (243+/-1) + (27+/-2)exp[-y/(7.5+/-1.2)] up to the zinc-blende GeC compound. (C) 1999 American Institute of Physics. [S0003-6951(99)01305-4].
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页码:691 / 693
页数:3
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