Hole drift-mobility measurements in contemporary amorphous silicon

被引：12

作者：

Dinca, S ^{[1
]}

Ganguly, G ^{[1
]}

Lu, Z ^{[1
]}

Schiff, EA ^{[1
]}

Vlahos, V ^{[1
]}

Wronski, CR ^{[1
]}

Yuan, Q ^{[1
]}

机构：

[1] Syracuse Univ, Dept Phys, Syracuse, NY 13244 USA

来源：

AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003 | 2003年 / 762卷

关键词：

D O I：

10.1557/PROC-762-A7.1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present hole drift-mobility measurements on hydrogenated amorphous silicon from several laboratories. These temperature-dependent measurements show significant variations of the hole mobility for the differing samples. Under standard conditions (displacement/field ratio of 2x10(-9) cm(2)/V), hole mobilities reach values as large as 0.01 cm(2)/Vs at room-temperature; these values are improved about tenfold over drift-mobilities of materials made a decade or so ago. The improvement is due partly to narrowing of the exponential bandtail of the valence band, but there is presently little other insight into how deposition procedures affect the hole drift-mobility.

引用

页码：345 / 350

页数：6

共 4 条

[1] Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H [J].