Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence

被引：4

作者：

Biggeri, U

Borchi, E

Bruzzi, M

Li, Z

Verbitskaya, E

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

[2] Univ Florence, Dipartimento Energet, Firenze, Italy

[3] Ist Nazl Fis Nucl, I-50125 Firenze, Italy

[4] RAS, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 409卷 / 1-3期

关键词：

D O I：

10.1016/S0168-9002(97)01258-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical properties of high (4-6 k Omega cm) and medium (1-1.5 k Omega cm) resistivity p(+)/n/n(+) silicon detectors irradiated with very high fluence neutrons, up to 4x10(15) neutrons/cm(2), have been studied. Some new results are presented and discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：176 / 179

页数：4

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