INTERSTITIAL DEFECT REACTIONS IN SILICON

被引：138

作者：

ASOM, MT

BENTON, JL

SAUER, R

KIMERLING, LC

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.98465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：256 / 258

页数：3

共 18 条

[1]

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CHANTRE, A ;

KIMERLING, LC .

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[5]

CHANTRE A, 1986, DEFECTS SEMICONDUCTO, V10, P1111

[6] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

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NEWMAN, RC ;

OATES, AS .

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[7]

Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221

[8]

Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[9] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[10] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J].

ODONNELL, KP ;

LEE, KM ;

WATKINS, GD .

PHYSICA B & C, 1983, 116 (1-3) :258-263

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