ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON

被引：110

作者：

ODONNELL, KP ^{[1
]}

LEE, KM ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90256-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：258 / 263

页数：6

共 19 条

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[2] BROWER KL, 1978, PHYS REV B, V17, P4130, DOI 10.1103/PhysRevB.17.4130
[3] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617
[4] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON
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DOCARMO, MC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23): : L687 - L691
[5] DAVIES G, 1981, UNPUB
[6] ELLIOTT KR, 1981, UNPUB
[7] UNIAXIAL-STRESS MEASUREMENTS ON THE 0.97EV LINE IN IRRADIATED SILICON
FOY, CP
DOCARMO, MC
DAVIES, G
LIGHTOWLERS, EC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (01): : L7 - L12
[8] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON
JONES, CE
JOHNSON, ES
COMPTON, WD
NOONAN, JR
STREETMA.BG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410
[9] KONOPLEV VS, 1977, IOP C SERIES, V31, P244
[10] OPTICAL-DETECTION OF MAGNETIC-RESONANCE FOR A DEEP-LEVEL DEFECT IN SILICON
LEE, KM
ODONNELL, KP
WEBER, J
CAVENETT, BC
WATKINS, GD
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (01) : 37 - 40