OPTICAL-DETECTION OF MAGNETIC-RESONANCE FOR A DEEP-LEVEL DEFECT IN SILICON

被引：57

作者：

LEE, KM

ODONNELL, KP

WEBER, J

CAVENETT, BC

WATKINS, GD

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.48.37

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：37 / 40

页数：4

共 16 条

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN
BEAN, AR
NEWMAN, RC
SMITH, RS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &
[2] STATIC, QUASISTATIC, AND QUASI-DYNAMIC JAHN-TELLER EFFECT IN EPR-SPECTRA OF AG2+ IN SRO, CAO, AND MGO
BOATNER, LA
REYNOLDS, RW
CHEN, Y
ABRAHAM, MM
[J]. PHYSICAL REVIEW B, 1977, 16 (01): : 86 - 106
[3] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON
DAVIES, G
DOCARMO, MC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23): : L687 - L691
[4] Davies Glyn, COMMUNICATION
[5] ELLIOT KR, COMMUNICATION
[6] UNIAXIAL-STRESS MEASUREMENTS ON THE 0.97EV LINE IN IRRADIATED SILICON
FOY, CP
DOCARMO, MC
DAVIES, G
LIGHTOWLERS, EC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (01): : L7 - L12
[7] Ham F. S., 1972, ELECT PARAMAGNETIC R
[8] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON
JONES, CE
JOHNSON, ES
COMPTON, WD
NOONAN, JR
STREETMA.BG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410
[9] KONOPLEV VS, 1977, IOP C SERIES, V31, P244
[10] PHOTOLUMINESCENCE FROM SI IRRADIATED WITH 1.5-MEV ELECTRONS AT 100DEGREESK
NOONAN, JR
KIRKPATRICK, CG
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3010 - 3015