共 36 条
- [1] ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10): : 3988 - +
- [3] BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290
- [4] Brelot A., 1971, Radiation Effects, V9, P65, DOI 10.1080/00337577108242034
- [5] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031
- [6] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617
- [7] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +
- [8] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &
- [9] CORBETT JW, 1966, ELECTRON IRRADIATION
- [10] Daly D. F., 1971, Radiation Effects, V8, P203, DOI 10.1080/00337577108231030