Space fluctuation of empty states on 3C-SiC(001) surface

We present a spatial fluctuation of empty states, obtained with scanning tunneling microscopy (STM), on clean 3C-SiC(001)-3 x 2 surface, formed by in situ cleaning, while filled stales are apparently well-ordered. The fluctuation is an intrinsic disorder firstly observed on a clean semiconductor surface. The: disorder is caused by inter-dimer buckling of a pair of Si dimers in a 3 x 2 unit cell, A buckling direction in each cell is determined individually independent from the directions of adjacent: bucklings, resulting in the Intrinsic surface disorder. The disorder is stable for longer times and for multiple tip scannings under STM observations, The random buckling direction originates from the isolation of each dimer pair from adjacent dimer pairs. The enhanced fluctuation in the budding in the empty states is caused by charge transfer from an up-dimer to a down-dimer in a dimer pair.