Diffusion and incorporation:: shape evolution during overgrowth on structured substrates

被引：24

作者：

Braun, W ^{[1
]}

Kaganer, VM ^{[1
]}

Trampert, A ^{[1
]}

Schönherr, HP ^{[1
]}

Gong, Q ^{[1
]}

Nötzel, R ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

computer simulation; growth models; mass transfer; surface processes; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)00631-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We simulate the surface shapes during homoepitaxial overgrowth of patterned GaAs substrates in the sector (0 0 1)(111)A. The model for the shape evolution is based on a diffusion equation in which the orientation-dependent parameters vary according to a simple model of the surface free energy of the zineblende crystal structure. Metastable pseudofacets its well as the initial shape of the step are demonstrated to play a major role in the evolution of the surface during overgrowth. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：51 / 55

页数：5

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