Adatom concentration on GaAs(001) during MBE annealing

被引：31

作者：

Johnson, MD

Leung, KT

Birch, A

Orr, BG

Tersoff, J

机构：

[1] UNIV MICHIGAN,HARRISON M RANDALL LAB,ANN ARBOR,MI 48109

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1996年 / 350卷 / 1-3期

关键词：

arsenic; epitaxy; equilibrium thermodynamics and statistical mechanics; evaporation and sublimation; gallium; gallium arsenide; low index single crystal surfaces; models of surface chemical reactions; models of surface kinetics; molecular beam epitaxy; reflection high-energy electron diffraction (RHEED); scanning tunneling microscopy; semiconducting surfaces; surface chemical reaction; surface thermodynamics;

D O I：

10.1016/0039-6028(95)01110-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study the concentration of adatoms on GaAs(001) during annealing under MBE conditions. By rapidly cooling the sample from typical growth temperatures and typical As overpressures, the thermal concentration of adatoms can be frozen into small islands on the terraces. The area of the resulting islands is measured with STM far from terrace steps, giving an estimate of the concentration of adatoms during equilibrium. We find that a surprisingly large concentration of adatoms is present for typical growth temperatures, e.g. 0.18 monolayer at 600 degrees C. Possible consequences for current growth models are discussed.

引用

页码：254 / 258

页数：5

共 15 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].