LARGE-SCALE SURFACE-STRUCTURE FORMED DURING GAAS (001) HOMOEPITAXY

被引：137

作者：

ORME, C

JOHNSON, MD

SUDIJONO, JL

LEUNG, KT

ORR, BG

机构：

[1] H. M. Randall Laboratory, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.111004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy films grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 10. The mounding does not occur on surfaces grown in step flow. We propose that the multilayered features are an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.

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页码：860 / 862

页数：3

相关论文

共 14 条

[1] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

DEMIGUEL, JL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L478-L480

[2] KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP [J].

COTTA, MA ;

HAMM, RA ;

STALEY, TW ;

CHU, SNG ;

HARRIOTT, LR ;

PANISH, MB ;

TEMKIN, H .

PHYSICAL REVIEW LETTERS, 1993, 70 (26) :4106-4109

[3] INSITU SCANNING TUNNELING MICROSCOPY OBSERVATION OF SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY [J].

HELLER, EJ ;

LAGALLY, MG .

APPLIED PHYSICS LETTERS, 1992, 60 (21) :2675-2677

[4]

Hunt A. G., UNPUB

[5] DIRECT OBSERVATION OF THE GROWTH-INTERRUPTION EFFECT FOR MOLECULAR-BEAM-EPITAXY GROWTH ON GAAS(001) BY SCANNING TUNNELING MICROSCOPY [J].

IDE, T ;

YAMASHITA, A ;

MIZUTANI, T .

PHYSICAL REVIEW B, 1992, 46 (03) :1905-1908

[6] REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ISU, T ;

WATANABE, A ;

HATA, M ;

KATAYAMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2259-L2261

[7] GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001) [J].

JOHNSON, MD ;

SUDIJONO, J ;

HUNT, AW ;

ORR, BG .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :484-486

[8] STABLE AND UNSTABLE GROWTH IN MOLECULAR-BEAM EPITAXY [J].

JOHNSON, MD ;

ORME, C ;

HUNT, AW ;

GRAFF, D ;

SUDIJONO, J ;

SANDER, LM ;

ORR, BG .

PHYSICAL REVIEW LETTERS, 1994, 72 (01) :116-119

[9]

ORR BG, 1991, REV SCI INSTRUM, V6, P1400

[10] STEP MOTION ON CRYSTAL SURFACES [J].

SCHWOEBEL, RL ;

SHIPSEY, EJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3682-+