GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001)

被引：21

作者：

JOHNSON, MD

SUDIJONO, J

HUNT, AW

ORR, BG

机构：

[1] Harrison M. Randall Laboratory, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. After an initial transient regime, indicated by reflection high-energy electron diffraction oscillations, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed generalized step flow.

引用

收藏

页码：484 / 486

页数：3

相关论文

共 14 条

[1] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[2]

JOHNSON MD, IN PRESS PHYS REV LE

[3] MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS ATOMIC DIMENSION CONTROL AND THE EVALUATION OF CRYSTAL-GROWTH DYNAMICS [J].

JOYCE, BA .

CONTEMPORARY PHYSICS, 1991, 32 (01) :21-34

[4] SCALING ANALYSIS OF SURFACE-ROUGHNESS AND BRAGG OSCILLATION DECAY IN MODELS FOR LOW-TEMPERATURE EPITAXIAL-GROWTH [J].

KANG, HC ;

EVANS, JW .

SURFACE SCIENCE, 1992, 271 (1-2) :321-330

[5] INITIAL-STAGES OF SILICON HOMOEPITAXY STUDIED BY INSITU REFLECTION ELECTRON-MICROSCOPY [J].

LATYSHEV, AV ;

ASEEV, AL ;

KRASILNIKOV, AB ;

STENIN, SI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (02) :421-430

[6]

ORME C, IN PRESS APPL PHYS L

[7]

ORR BG, 1991, REV SCI INSTRUM, V6, P1400

[8]

ORR BG, IN PRESS SOLID STATE

[9] MORPHOLOGICAL MODEL OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON GAAS(001) [J].

SHITARA, T ;

VVEDENSKY, DD ;

WILBY, MR ;

ZHANG, J ;

NEAVE, JH ;

JOYCE, BA .

APPLIED PHYSICS LETTERS, 1992, 60 (12) :1504-1506

[10] SURFACE-TOPOGRAPHY CHANGES DURING THE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY [J].

SMITH, GW ;

PIDDUCK, AJ ;

WHITEHOUSE, CR ;

GLASPER, JL ;

KEIR, AM ;

PICKERING, C .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3282-3284