GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001)

被引：21

作者：

JOHNSON, MD

SUDIJONO, J

HUNT, AW

ORR, BG

机构：

[1] Harrison M. Randall Laboratory, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. After an initial transient regime, indicated by reflection high-energy electron diffraction oscillations, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed generalized step flow.

引用

页码：484 / 486

页数：3

共 14 条

[11] HOMOEPITAXIAL GROWTH OF IRON AND A REAL-SPACE VIEW OF REFLECTION-HIGH-ENERGY-ELECTRON DIFFRACTION [J].