MORPHOLOGICAL MODEL OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON GAAS(001)

被引：52

作者：

SHITARA, T ^{[1
]}

VVEDENSKY, DD ^{[1
]}

WILBY, MR ^{[1
]}

ZHANG, J ^{[1
]}

NEAVE, JH ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.107285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction (RHEED) measurements have been carried out on vicinal GaAs(001) surfaces which are misoriented by 2-degrees and 3-degrees toward the [010] direction. The misorientation-angle dependence and the Ga-flux dependence of the growth-mode transitions for a fixed As/Ga ratio of approximately 2.5 have been reproduced by Monte Carlo simulations of a solid-on-solid model. The surface step-density evolutions generated by the simulations are remarkably similar in profile to the measured RHEED oscillations, and show approximately the same relative change of amplitude with temperature for the chosen diffraction conditions.

引用

收藏

页码：1504 / 1506

页数：3

相关论文

共 16 条

[1] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100) [J].

CHEN, P ;

KIM, JY ;

MADHUKAR, A ;

CHO, NM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :890-895

[2] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].

CLARKE, S ;

VVEDENSKY, DD .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238

[3] QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J].

HENZLER, M .

SURFACE SCIENCE, 1978, 73 (01) :240-251

[4] RHEED FROM STEPPED SURFACES AND ITS RELATION TO RHEED INTENSITY OSCILLATIONS OBSERVED DURING MBE [J].

KAWAMURA, T ;

MAKSYM, PA .

SURFACE SCIENCE, 1985, 161 (01) :12-24

[5]

MADHUKAR A, 1987, CRC CRIT R SOLID ST, V13, P1434

[6] NONLINEAR EQUATION FOR DIFFUSION AND ADATOM INTERACTIONS DURING EPITAXIAL-GROWTH ON VICINAL SURFACES [J].

MYERSBEAGHTON, AK ;

VVEDENSKY, DD .

PHYSICAL REVIEW B, 1990, 42 (09) :5544-5554

[7] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[9] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[10] DYNAMIC CALCULATIONS FOR RHEED FROM MBE GROWING SURFACES .1. GROWTH ON A LOW-INDEX SURFACE [J].

PENG, LM ;

WHELAN, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1991, 432 (1885) :195-213