REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引:35
作者
ISU, T
WATANABE, A
HATA, M
KATAYAMA, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期
关键词
D O I
10.1143/JJAP.27.L2259
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L2259 / L2261
页数:3
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[2]   OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ICHIKAWA, M ;
DOI, T .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143
[3]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438
[4]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[5]   STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY [J].
NEAVE, JH ;
JOYCE, BA .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :387-397
[6]   MICROSCOPY OF SURFACES AND APPLICATIONS TO MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
CHEN, CH ;
WERDER, DJ .
ULTRAMICROSCOPY, 1985, 17 (03) :185-191
[7]   REFLECTION ELECTRON-MICROSCOPIC OBSERVATION OF HIGH-TEMPERATURE GROWN GAAS-SURFACES OF MOLECULAR-BEAM EPITAXY [J].
SHIMIZU, N ;
MUTO, S .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :743-745