MICROSCOPY OF SURFACES AND APPLICATIONS TO MOLECULAR-BEAM EPITAXY

[1] TESTS OF SI(111)-7X7 STRUCTURAL MODELS BY COMPARISON WITH TRANSMISSION ELECTRON-DIFFRACTION PATTERNS [J]. SURFACE SCIENCE, 1984, 147 (2-3) : 385 - 395

[2] SURFACE DISLOCATION PROCESS FOR SURFACE RECONSTRUCTION AND ITS APPLICATION TO THE SILICON (111) 7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (03) : 199 - 202

[3] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 5 - 13

[4] PETROFF PM, 1984, ELECTRON MICROS, V31, P117

[5] HIGH-ENERGY TRANSMISSION ELECTRON-DIFFRACTION AND IMAGING STUDIES OF THE SILICON(111) 7X7 SURFACE-STRUCTURE [J]. ULTRAMICROSCOPY, 1983, 11 (2-3) : 117 - 124

[6] HIGH-RESOLUTION SURFACE STUDY BY INSITU UHV TRANSMISSION ELECTRON-MICROSCOPY [J]. ULTRAMICROSCOPY, 1982, 8 (1-2) : 145 - 161

[7] TECHNIQUES FOR ROUTINE UHV INSITU ELECTRON-MICROSCOPY OF GROWTH PROCESSES OF EPITAXIAL THIN-FILMS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1978, 11 (05): : 441 - 448

[8] TAKAYANAGI K, 1981, 10TH P INT C EL MICR, P43

[9] DEVELOPMENT OF STEPS ON GAAS DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 726 - 729

[10] CRYOPUMP AND SAMPLE HOLDER FOR CLEAN RECONSTRUCTED SURFACE OBSERVATIONS IN A TRANSMISSION ELECTRON-MICROSCOPE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (11) : 1534 - 1537

[1] TESTS OF SI(111)-7X7 STRUCTURAL MODELS BY COMPARISON WITH TRANSMISSION ELECTRON-DIFFRACTION PATTERNS [J]. SURFACE SCIENCE, 1984, 147 (2-3) : 385 - 395

[2] SURFACE DISLOCATION PROCESS FOR SURFACE RECONSTRUCTION AND ITS APPLICATION TO THE SILICON (111) 7X7 RECONSTRUCTION [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (03) : 199 - 202

[3] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) : 5 - 13

[4] PETROFF PM, 1984, ELECTRON MICROS, V31, P117

[5] HIGH-ENERGY TRANSMISSION ELECTRON-DIFFRACTION AND IMAGING STUDIES OF THE SILICON(111) 7X7 SURFACE-STRUCTURE [J]. ULTRAMICROSCOPY, 1983, 11 (2-3) : 117 - 124

[6] HIGH-RESOLUTION SURFACE STUDY BY INSITU UHV TRANSMISSION ELECTRON-MICROSCOPY [J]. ULTRAMICROSCOPY, 1982, 8 (1-2) : 145 - 161

[7] TECHNIQUES FOR ROUTINE UHV INSITU ELECTRON-MICROSCOPY OF GROWTH PROCESSES OF EPITAXIAL THIN-FILMS [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1978, 11 (05): : 441 - 448

[8] TAKAYANAGI K, 1981, 10TH P INT C EL MICR, P43

[9] DEVELOPMENT OF STEPS ON GAAS DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 726 - 729

[10] CRYOPUMP AND SAMPLE HOLDER FOR CLEAN RECONSTRUCTED SURFACE OBSERVATIONS IN A TRANSMISSION ELECTRON-MICROSCOPE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (11) : 1534 - 1537