DEVELOPMENT OF STEPS ON GAAS DURING MOLECULAR-BEAM EPITAXY

被引：34

作者：

VANHOVE, JM

COHEN, PI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：726 / 729

页数：4

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