A COMBINED MOLECULAR-BEAM EPITAXY AND SCANNING TUNNELING MICROSCOPY SYSTEM

被引：29

作者：

ORR, BG

SNYDER, CW

JOHNSON, M

机构：

[1] H. M. Randall Laboratory, University of Michigan, Ann Arbor

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.1142456

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A combined molecular-beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III-V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real-space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.

引用

页码：1400 / 1403

页数：4

共 8 条

[1]

BARTLETT D, 1991, REV SCI INSTRUM, V62, P1263

[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].

BINNIG, G ;

ROHRER, H ;

GERBER, C ;

WEIBEL, E .

PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123

[3]

BINNING G, 1986, IBM J RES DEV, V4, P30

[4] A SIMPLIFIED SCANNING TUNNELING MICROSCOPE FOR SURFACE SCIENCE STUDIES [J].

DEMUTH, JE ;

HAMERS, RJ ;

TROMP, RM ;

WELLAND, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1320-1323

[5]

LARSEN PK, 1958, REFLECTION HIGH ENER

[6]

ORR BG, UNPUB

[7]

PARKER EHC, 1985, TECHNOLOGY PHYSICS M

[8]

SNYDER CW, IN PRESS J VAC SCI T

← 1 →