STM OBSERVATION OF GROWTH INTERRUPTION EFFECT OF MBE GROWTH

被引：5

作者：

IDE, T

YAMASHITA, A

MIZUTANI, T

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305, 34, Miyukigaoka

来源：

SURFACE SCIENCE | 1993年 / 287卷 / pt B期

关键词：

D O I：

10.1016/0039-6028(93)91118-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The evolution of the surface configuration of GaAs(001)2 x 4 upon annealing after molecular-beam-epitaxy growth interruption was examined by scanning tunneling microscopy. Soon after interruption, the surface exhibits many two-dimensional islands and a ragged step configuration. Continuous annealing after growth interruption causes changes in the surface topography without changing the reconstruction. At first the surface becomes smooth by decreasing the number of islands and smoothing the step shapes. During annealing the size of the islands increases by coalescing. Further successive annealing causes step bunching. The decrease in the number of islands and smoothing of step shapes, which are found to be the effects of the growth interruption, are explained by the shortening of the total step length.

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页码：1013 / 1018

页数：6

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