DYNAMICS AND ROUGHNESS SPECTRUM OF THE GAAS(001) SURFACE DURING THE MBE PROCESS

被引:15
作者
DAWERITZ, L
GRIESCHE, J
HEY, R
HERZOG, J
机构
[1] Zentralinstitut für Elektronenphysik, O- 1086 Berlin
关键词
D O I
10.1016/0022-0248(91)90948-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The roughness spectrum of the GaAs(001) surface has been studied during growth and after growth interruption by combining the time-dependent recording of the RHEED specular beam intensity with intensity profile measurements of the specular streak. The profiles reflect drastic changes in the distances of Ga-terminated steps in [110BAR] direction, the roughness of As-terminated steps in [110] direction, and the number of levels included in the surface profile. The rates of the underlying kinetic and thermodynamic processes are estimated from the recovery of the specular beam intensity which shows a stepwise increase for growth interruptions after extended deposition.
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页码:65 / 69
页数:5
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