SPOT PROFILE ANALYSIS (LEED) OF DEFECTS AT SILICON SURFACES

[1] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[2] ENERGY-LOSS-SPECTROSCOPY STUDIES ON THE ADSORPTION OF HYDROGEN ON CLEAVED SI(111)-(2X1)SURFACES [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2278 - 2284

[3] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[4] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[5] HAHN PO, J APPL PHYS

[6] LEED STUDIES OF SURFACE IMPERFECTIONS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 450 - 469

[7] HENZLER M, 1979, ADV SOLID STATE PHYS, V19, P193

[8] HENZLER M, 1977, ELECTRON SPECTROSCOP

[9] HENZLER M, 1978, SURFACE SCI, V73, P230

[10] THE PRESENT STATUS OF LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 13 (1-2): : 260 - 281

[1] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J]. SURFACE SCIENCE, 1973, 34 (03) : 717 - 731

[2] ENERGY-LOSS-SPECTROSCOPY STUDIES ON THE ADSORPTION OF HYDROGEN ON CLEAVED SI(111)-(2X1)SURFACES [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2278 - 2284

[3] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[4] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[5] HAHN PO, J APPL PHYS

[6] LEED STUDIES OF SURFACE IMPERFECTIONS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 450 - 469

[7] HENZLER M, 1979, ADV SOLID STATE PHYS, V19, P193

[8] HENZLER M, 1977, ELECTRON SPECTROSCOP

[9] HENZLER M, 1978, SURFACE SCI, V73, P230

[10] THE PRESENT STATUS OF LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 13 (1-2): : 260 - 281