NUCLEATION AND GROWTH DURING MOLECULAR-BEAM EPITAXY (MBE) OF SI ON SI(111)

[1] AARTS J, COMMUNICATION

[2] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1985, 152 (APR) : 17 - 26

[3] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1983, 126 (1-3) : 236 - 244

[4] QUANTITATIVE-EVALUATION OF TERRACE WIDTH DISTRIBUTIONS FROM LEED MEASUREMENTS [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 534 - 548

[5] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 1 - 8

[6] FOXON CT, 1987, J CRYSTAL GROWTH, V81

[7] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[8] Henzler M., 1985, SPRINGER SERIES SURF, V2, P351

[9] LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111) [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 428 - 433

[10] ICHIKAWA M, 1988, RHEED WORKSHOP

[1] AARTS J, COMMUNICATION

[2] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1985, 152 (APR) : 17 - 26

[3] SCANNING TUNNELING MICROSCOPY [J]. SURFACE SCIENCE, 1983, 126 (1-3) : 236 - 244

[4] QUANTITATIVE-EVALUATION OF TERRACE WIDTH DISTRIBUTIONS FROM LEED MEASUREMENTS [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 534 - 548

[5] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 1 - 8

[6] FOXON CT, 1987, J CRYSTAL GROWTH, V81

[7] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[8] Henzler M., 1985, SPRINGER SERIES SURF, V2, P351

[9] LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111) [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 428 - 433

[10] ICHIKAWA M, 1988, RHEED WORKSHOP