LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111)

[1] QUANTITATIVE-EVALUATION OF TERRACE WIDTH DISTRIBUTIONS FROM LEED MEASUREMENTS [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 534 - 548

[2] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[3] GRONWALD KD, 1978, THESIS HANNOVER

[4] GRONWALD KD, 1981, THESIS HANNOVER

[5] MEASUREMENT OF SURFACE-DEFECTS BY LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 205 - 214

[6] DEFECTS AT SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1985, 152 (APR) : 963 - 976

[7] LEED STUDIES OF DEFECTS AT SURFACES AND INTERFACES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 744 - 750

[8] LEED STUDIES OF SURFACE IMPERFECTIONS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 450 - 469

[9] JONA F, 1984, 1ST P INT C STRUCT S

[10] THE PRESENT STATUS OF LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 13 (1-2): : 260 - 281

[1] QUANTITATIVE-EVALUATION OF TERRACE WIDTH DISTRIBUTIONS FROM LEED MEASUREMENTS [J]. SURFACE SCIENCE, 1986, 167 (2-3) : 534 - 548

[2] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187

[3] GRONWALD KD, 1978, THESIS HANNOVER

[4] GRONWALD KD, 1981, THESIS HANNOVER

[5] MEASUREMENT OF SURFACE-DEFECTS BY LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 205 - 214

[6] DEFECTS AT SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1985, 152 (APR) : 963 - 976

[7] LEED STUDIES OF DEFECTS AT SURFACES AND INTERFACES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 744 - 750

[8] LEED STUDIES OF SURFACE IMPERFECTIONS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 450 - 469

[9] JONA F, 1984, 1ST P INT C STRUCT S

[10] THE PRESENT STATUS OF LOW-ENERGY ELECTRON-DIFFRACTION [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 13 (1-2): : 260 - 281