Ion stimulated desorption of secondary ions from ionic compound surfaces

被引：29

作者：

Souda, R ^{[1
]}

机构：

[1] Natl Inst Res Inorgan Mat, Ibaraki, Osaka 3050044, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.82.1570

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanism of secondary ions formation has been investigated during He+ bombardment of ionic-compound surfaces. The O+ ions desorb from the TiO2(110) surface via the potential emission as revealed from their energy and angular distributions, while very little O+ ejection occurs from the MgO(001), Al2O3(0001), and SiO2 surfaces. The O+ ion is caused by the antibonding state with the O 2s core hole and its decay via the intra-atomic Auger process, resulting from the strong O 2p-Ti 3d hybridization and the quasiresonant charge exchange between the He 1s and O 2s states.[S0031-9007(99)08458-6].

引用

页码：1570 / 1573

页数：4

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