Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE

被引：6

作者：

Kikuchi, A ^{[1
]}

Yoshizawa, M ^{[1
]}

Mori, M ^{[1
]}

Fujita, N ^{[1
]}

Kushi, K ^{[1
]}

Sasamoto, H ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 102, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

基金：

日本学术振兴会;

关键词：

GaN; AlGaN; molecular beam epitaxy; RF-plasma source; quasi-ternary compounds; superlattice;

D O I：

10.1016/S0022-0248(98)00182-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxGa1-xN quasi-ternary compounds were grown on (0 0 0 1) Al2O3 substrates with shutter control method by molecular beam epitaxy using an RF-radical nitrogen source. Theoretical estimation indicated that for Al0.5Ga0.5N/GaN short period superlattice, very thin Al0.5Ga0.5N barrier layer less than 2 mono-layer is required for obtaining Al0.1Ga0.9N quasi-ternary properties. The Al content of the quasi-ternary compounds, which consisted of GaN/AlGaN mono-layer order superlattice, was controlled from 0 to 0.47, with changing the shutter pattern of Ga, Al and nitrogen sources. The growth of GaN/Al0.07Ga0.93N/Al0.3Ga0.70N SCH multi-layer structure with the different Al composition without growth interruption using quasi-ternary AlGaN is also demonstrated. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：109 / 113

页数：5

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