2-DIMENSIONAL GROWTH OF GAN ON VARIOUS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE

被引：20

作者：

KIKUCHI, A

HOSHI, H

KISHINO, K

机构：

[1] Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku Tokyo, 102

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

III-V NITRIDE SEMICONDUCTOR; GAN; GAS SOURCE MOLECULAR BEAM EPITAXY; RF-RADICAL BEAM SOURCE; RF-MBE; RADICAL NITROGEN; 2-DIMENSIONAL GROWTH; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

D O I：

10.1143/JJAP.34.1153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional layer-by-layer growth conditions for GaN epitaxial layers by gas source molecular beam epitaxy (MBE) using a 13.56 MHz RF-radical nitrogen source were systematically investigated. As the growth rate was decreased, the reflection high-energy electron diffraction patterns of the GaN epitaxial layers grown on (0001) Al2O3 were changed from spotty patterns to streak ones in the earlier stage of GaN growth. It was clearly indicated that the lower growth rate (R<0.1 mu/h) enhanced the two-dimensional growth. Furthermore, the introduction of the annealed GaN buff er layers (60 Angstrom) drastically enhanced the two-dimensional growth of the layers on (0001) Al(2)O3, (001) MgO and (001) GaAs substrates. The surface morphology dependence on substrate materials was also described.

引用

页码：1153 / 1158

页数：6

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