Measurement of spontaneous-emission enhancement near the one-dimensional photonic band edge of semiconductor heterostructures

被引：141

作者：

Tocci, MD

Scalora, M

Bloemer, MJ

Dowling, JP

Bowden, CM

机构：

[1] UNIV ALABAMA, DEPT ELECT ENGN, HUNTSVILLE, AL 35899 USA

[2] USA, MISSILE COMMAND, AMSMI RD WS, REDSTONE ARSENAL, AL 35898 USA

来源：

PHYSICAL REVIEW A | 1996年 / 53卷 / 04期

关键词：

D O I：

10.1103/PhysRevA.53.2799

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PEG) structures. The PEG samples are multilayer AlAs/Al0.2Ga0.8As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spectrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies near the photonic band edge.

引用

页码：2799 / 2803

页数：5

共 35 条

[21] QUANTUM OPTICS OF LOCALIZED LIGHT IN A PHOTONIC BAND-GAP [J].