Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

被引：15

作者：

Chen, WY ^{[1
]}

Chang, WH

Chang, HS

Hsu, TM

Lee, CC

Chen, CC

Luan, PG

Chang, JY

Hsieh, TP

Chyi, JI

机构：

[1] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

[2] Natl Cent Univ, Ctr Nano Sci & Technol, Chungli 32054, Taiwan

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 32054, Taiwan

[4] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.2008367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of InAs quantum dots with photonic crystal microcavity emitting near 1.3 mu m were investigated at room temperature. The photoluminescence (PL) intensity for quantum dots in cavity was enhanced by two orders of magnitude. The large PL enhancement was attributed to the effects combining the improved extraction efficiency and the enhanced spontaneous emission rate due to the Purcell effect. A threefold Purcell enhancement is observed at room temperature, which is predominantly achieved by the very small mode volume of the photonic crystal microcavity. (C) 2005 American Institute of Physics.

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页数：3

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