Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope

被引：53

作者：

Matsuda, K ^{[1
]}

Saiki, T

Saito, H

Nishi, K

机构：

[1] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan

[2] NEC Corp Ltd, Optoelect Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] NEC Corp Ltd, High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) at room temperature with a near-field scanning optical microscope. Successful detection of a weak photoluminescence (PL) signal from a single QD at room temperature could be achieved by using a double-tapered fiber probe having the advantages of both high collection efficiency and high spatial resolution. Through the precise examination of PL spectra of many QDs, including broadening and saturation behaviors, the homogeneous linewidth of the ground state emission is evaluated as from 9.8 to 14.5 meV. (C) 2000 American Institute of Physics. [S0003-6951(00)03001-1].

引用

页码：73 / 75

页数：3

共 18 条

[1] PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT [J].

BRUNNER, K ;

BOCKELMANN, U ;

ABSTREITER, G ;

WALTHER, M ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1992, 69 (22) :3216-3219

[2] SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS/ALGAAS STRUCTURE [J].

BRUNNER, K ;

ABSTREITER, G ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (08) :1138-1141

[3] Multiexciton spectroscopy of a single self-assembled quantum dot [J].

Dekel, E ;

Gershoni, D ;

Ehrenfreund, E ;

Spektor, D ;

Garcia, JM ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 1998, 80 (22) :4991-4994

[4] Fine structure splitting in the optical spectra of single GaAs quantum dots [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008

[5] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[6] NEAR-FIELD SPECTROSCOPY OF THE QUANTUM CONSTITUENTS OF A LUMINESCENT SYSTEM [J].

HESS, HF ;

BETZIG, E ;

HARRIS, TD ;

PFEIFFER, LN ;

WEST, KW .

SCIENCE, 1994, 264 (5166) :1740-1745

[7] Dephasing processes in self-organized strained InGaAs single-dots on (311)B-GaAs substrate [J].

Kamada, H ;

Temmyo, J ;

Notomi, M ;

Furuta, T ;

Tamamura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4194-4198

[8] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[9] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[10] Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots [J].

Motohisa, J ;

Baumberg, JJ ;

Heberle, AP ;

Allam, J .

SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1335-1339

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