Analysis of barrier height at crystalline domain boundary and in-domain mobility in pentacene polycrystalline films on SiO2

被引:76
作者
Matsubara, Ryousuke [1 ]
Ohashi, Noboru [1 ]
Sakai, Masatoshi [1 ]
Kudo, Kazuhiro [1 ]
Nakamura, Masakazu [1 ]
机构
[1] Chiba Univ, Grad Sch Engn, Dept Elect & Elect Engn, Chiba 2638522, Japan
关键词
D O I
10.1063/1.2943659
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crystalline domain size and temperature dependences of the carrier mobility of commonly used pentacene polycrystalline films on SiO2 have been studied by four-point-probe field-effect transistor measurements. The mobility is found to be proportional to the crystalline domain size and thermally activated. This behavior is well explained by a polycrystalline model with the diffusion theory, and thereby the barrier height at boundary and the mobility in domain are calculated to be 150 meV and 1.0 cm(2)/V s, respectively. The in-domain mobility is lower than those expected in single crystals, which suggests that there exist some other limiting factors of carrier transport than the domain boundaries. (C) 2008 American Institute of Physics.
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页数:3
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