Interface-controlled, high-mobility organic transistors

被引：355

作者：

Jurchescu, Oana D. ^{[1
]}

Popinciuc, Mihaita ^{[1
]}

van Wees, Bart J. ^{[1
]}

Palstra, Thomas T. M. ^{[1
]}

机构：

[1] Univ Groningen, Ctr Mat Sci, Solid State Chem Lab, Nijenborgh 4, NL-9747 AG Groningen, Netherlands

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 05期

关键词：

D O I：

10.1002/adma.200600929

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

引用

页码：688 / 692

页数：5

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