Si nanowires grown from silicon oxide

被引:278
作者
Wang, N [1 ]
Tang, YH [1 ]
Zhang, YF [1 ]
Lee, CS [1 ]
Bello, I [1 ]
Lee, ST [1 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films, Hong Kong, Peoples R China
关键词
D O I
10.1016/S0009-2614(98)01228-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bulk-quantity Si nanowires have been synthesized by thermal evaporation of a powder mixture of silicon and SiO2. Transmission electron microscopy showed that, at the initial nucleation stage, silicon monoxide vapor was generated from the powder mixture and condensed on the substrate. Si nanoparticles were precipitated and surrounded by shells of silicon oxide. The Si nanowire nucleus consisted of a polycrystalline Si core with a high density of defects and a silicon oxide shell. The growth mechanism was proposed to be closely related to the defect structure and silicon monoxide. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:237 / 242
页数:6
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