A novel planarization process for polysilicon sacrificial layers in a micro-thermal system

被引：2

作者：

Chen, HR

Gau, C ^{[1
]}

Dai, BT

Tsai, MS

机构：

[1] Natl Cheng Kung Univ, Inst Aeronaut & Astronaut, Tainan 70101, Taiwan

[2] Natl Nano Device Lab, Hsinchu 30050, Taiwan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 108卷 / 1-3期

关键词：

planarization process; CMP;

D O I：

10.1016/j.sna.2003.04.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The objective of this study is to solve the difficulties encountered during planarization and etching of a polysilicon film that is deposited and used as a sacrificial layer in an oxide structure in a micro-thermal system such as a micro-channel device as mentioned in the previous paper. This polysilicon film has a relatively wide and deep ditch. Two different chemical-mechanical-polishing (CMP) processes that have been used to flatten the polysilicon-made sacrificial layer will be presented and the results are not very successful. A novel planarization technique using wet etch process is developed which has been shown to be able to flatten very effectively a surface with wide and deep ditch. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：86 / 90

页数：5