Synthesis of β-Ga2O3 nanowires by an MOCVD approach

被引：47

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 04期

关键词：

D O I：

10.1007/s00339-004-2982-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have synthesized monoclinic gallium oxide (beta-Ga2O3) nanowires on Au-coated Si substrates by a reaction of a trimethylgallium and oxygen mixture. The beta-Ga2O3 nanowires became progressively thinner from bottom to top, with diameters ranging from 10 to 200 nm and lengths of several micrometers. We found that Au-containing nanoparticles were attached to the tips of the beta-Ga2O3 nanowires and thus the nanowire growth could be a vapor-liquid-solid process.

引用

页码：763 / 765

页数：3

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