Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

被引：34

作者：

Shin, Sang-Il ^{[1
]}

Kwon, Jae-Hong ^{[1
]}

Kang, Hochul ^{[2
]}

Ju, Byeong-Kwon ^{[1
]}

机构：

[1] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea

[2] LG Display R&D Ctr, Anyang 431080, Kyongki Do, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 08期

关键词：

D O I：

10.1088/0268-1242/23/8/085009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 x 10(-2) cm(2) V-1 s(-1), a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

引用

页数：4

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