Effects of gate bias stress on the electrical characteristics of ZnO thin film transistor

被引：11

作者：

Jeon, Jae-Hong ^{[1
]}

Choe, Hee-Hwan ^{[1
]}

Lee, Kang-Woong ^{[1
]}

Shin, Jae-Heon ^{[2
]}

Hwang, Chi-Sun ^{[2
]}

Park, Sang-Hee Ko ^{[2
]}

Seo, Jong-Hyun ^{[3
]}

机构：

[1] Korea Aerosp Univ, Sch Elect Telecommun & Comp Engn, Goyang 412791, South Korea

[2] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea

[3] Korea Aerosp Univ, Dept Mat Sci & Engn, Goyang 412791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 01期

关键词：

zinc oxide; thin film transistor; electrical stability;

D O I：

10.3938/jkps.53.412

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed.

引用

页码：412 / 415

页数：4

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