Self-compensation in Mg doped p-type GaN grown by MOCVD

被引：114

作者：

Obloh, H ^{[1
]}

Bachem, KH ^{[1
]}

Kaufmann, U ^{[1
]}

Kunzer, M ^{[1
]}

Maier, M ^{[1
]}

Ramakrishnan, A ^{[1
]}

Schlotter, P ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, FHG IAF, D-79108 Freiburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

关键词：

GaN : Mg; self-compensation; MOCVD;

D O I：

10.1016/S0022-0248(98)00578-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The hole concentration and the Mg related photoluminescence bands in MOCVD-grown GaN:Mg have been investigated as a function of Mg-concentration. The hole density was found to reach a maximum for an Mg-content near 3 x 10(19) cm(-3). When increasing the Mg-concentration beyond this value the hole density drops rapidly. The analysis of the PL spectra reveals that near the maximum of the hole concentration, the dominant radiative recombination mechanism changes from a free-to-bound to a donor-acceptor (D-A) pair transition. These results strongly indicate that self-compensation effects limit the hole density in GaN:Mg samples. Based on theoretical predictions and experience with acceptor doped II-VI compounds, it is suggested that the deep donor D-d involved in self-compensation is a nearest-neighbor associate of a Mg-Ga acceptor with a nitrogen vacancy V-N. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：270 / 273

页数：4

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