Crystal growth and some properties of REMn2Si2 (RE=Y, Tb, Dy, Ho)

被引：9

作者：

Kudou, K

Okada, S

Mori, T

Iizumi, K

Shishido, T

Tanaka, T

Kanari, H

Rogl, P

机构：

[1] Kanagawa Univ, Fac Engn, Yokohama, Kanagawa 2218686, Japan

[2] Kokushikan Univ, Fac Engn, Tokyo 1548515, Japan

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[4] Tokyo Inst Polytech, Fac Engn, Atsugi, Kanagawa 2430297, Japan

[5] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9800812, Japan

[6] Univ Vienna, Inst Phys Chem, A-1090 Vienna, Austria

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2003年 / 358卷 / 1-2期

关键词：

REMn2Si2; (RE=Y; Tb; Dy; Ho); single crystal; lead flux; hardness; thermal property; magnetic susceptibility;

D O I：

10.1016/S0925-8388(03)00010-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single crystals of REMn2Si2 (RE=Y, Tb, Dy, Ho) were grown from a high-temperature lead metal solution in an argon atmosphere. Single crystals of REMn2Si2 were obtained in the form of thin plates with well-developed (001) faces. The as-grown REMn2Si2 crystals were used for measurements of micro-Vickers hardness at room temperature, oxidation resistance in air and magnetic susceptibility at low temperatures. The values of the micro-Vickers hardness for the (001) faces of REMn2Si2 crystals are about 5.5 GPa. The oxidation process of REMn2Si2 crystals was studied at a temperature below 1473 K by TG-DTA analyses. The TG curves show that the oxidation of YMn2Si2, TbMn2Si2, DyMn2Si2 and HoMn2Si2 crystals starts at about 811, 807, 844, and 849 K, respectively. Weight gains of the compounds after TG determination were measured to be in the range of 14.7-19.7 mass%. The results of magnetic susceptibility measurements at low temperatures of the compounds are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：182 / 187

页数：6

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