Impact of the Ga concentration on the microstructure of CuIn1-xGaxSe2

被引:52
作者
Abou-Ras, D. [1 ]
Caballero, R. [1 ]
Kaufmann, C. A. [1 ]
Nichterwitz, M. [1 ]
Sakurai, K. [1 ]
Schorr, S. [1 ]
Unold, T. [1 ]
Schock, H. W. [1 ]
机构
[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 03期
关键词
D O I
10.1002/pssr.200802059
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cross-sectional samples of CuIn1-xGaxSe2 layers grown by a three-stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin-film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = [Ga]/([Ga] + [In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn1-xGaxSe2 powder samples showing that the ratio of the lattice constants c/a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn1-xGaxSe2 layer and therefore larger average grain sizes. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:135 / 137
页数:3
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