Piezoelectric properties of Ca-modified PbTiO3 thin films

被引：94

作者：

Kholkin, AL ^{[1
]}

Calzada, ML ^{[1
]}

Ramos, P ^{[1
]}

Mendiola, J ^{[1
]}

Setter, N ^{[1
]}

机构：

[1] CSIC,ICMM,DEPT MET FERROELECT,E-28049 MADRID,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 23期

关键词：

D O I：

10.1063/1.117220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-field piezoelectric coefficient and strain were investigated in Ca-modified PbTiO3 thin films by means of optical interferometry. A remanent piezoelectric coefficient of 70 pm/V was observed that agrees well with the values previously reported for the bulk ceramics of the same composition. The efficient poling of the films can be achieved at room temperature under the held of 300 kV/cm. Electrically induced strains as high as 0.8% were observed using a bipolar driving field of 1 MV/cm. Strain response under a unipolar driving field exhibited a good linearity and small hysteresis. These properties combined with the low dielectric constant and high dielectric strength are shown to be attractive for micromechanical applications. (C) 1996 American Institute of Physics.

引用

页码：3602 / 3604

页数：3