Challenges for accurate reliability projections in the ultra-thin oxide regime

被引：83

作者：

Wu, EY ^{[1
]}

Abadeer, WW ^{[1
]}

Han, LK ^{[1
]}

Lo, SH ^{[1
]}

Hueckel, GR ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761593

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we discuss several important aspects of reliability projections, especially for ultra-thin oxides in direct tunneling regime such as stress methodologies, the determination of projection parameters, and their dependence on stress conditions as well as their impact on reliability projection. Most importantly, we found the Weibull shape factors and area dependence are key to understand the reliability limitations for ultra-thin oxides.

引用

页码：57 / 65

页数：9

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