Effects of thin GaAs insertion layer on InAs/(InGaAs)/InP(001) quantum dots grown by metalorganic chemical vapor deposition

被引：9

作者：

Park, K ^{[1
]}

Moon, P

Ahn, E

Hong, S

Yoon, E

Yoon, JW

Cheong, H

Leburton, JP

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[3] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

关键词：

D O I：

10.1063/1.1943494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the influence of a thin GaAs insertion layer (5-10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111 meV when they were grown on InGaAs and InP, respectively. In addition, a narrowing of full width at half maximum was observed when the thicker GaAs insertion layers and higher overgrowth temperature for the top capping layer were used. These results can be applied for tuning the emission wavelength around 1.55 mu m for optical fiber communication.(c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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