Synthesis of GaN nanowires by Tb catalysis

被引：10

作者：

Chen, Jinhua ^{[1
]}

Xue, Chengshan ^{[1
]}

Zhuang, Huizhao ^{[1
]}

Qin, Lixia ^{[1
]}

Li, Hong ^{[1
]}

Yang, Zhaozhu ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 15期

关键词：

GaN; nanowires; sputtering; single-crystal growth;

D O I：

10.1016/j.apsusc.2008.01.083

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4716 / 4719

页数：4

共 20 条

[1]

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates [J].