Origin of the stretched-exponential hole relaxation in regioregular poly(3-hexylthiophene)

被引:18
作者
Dicker, G
de Haas, MP
de Leeuw, DM
Siebbeles, LDA
机构
[1] Delft Univ Technol, Interfac Reactor Inst, Radiat Chem Dept, NL-2629 JB Delft, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[3] ASML, NL-5504 DR Veldhoven, Netherlands
关键词
D O I
10.1016/j.cplett.2004.12.058
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
It is shown that the time-dependence of a sufficiently low concentration of excess positive charges in the conjugated polymer regioregular poly(3-hexylthiophene) (RR-P3HT) is governed by the stretched-exponential (Kohlrausch) relation. The decay is attributed to the recombination of holes with negatively charged impurities in the sample. The stretch parameter is found to increase linearly with temperature, which can be attributed to dispersive hole transport in an exponential energy landscape. Extension of the recombination kinetics to include second-order effects (observed at higher initial hole concentrations) leads to a generalized Kohlrausch law. In the absence of impurities, a power-law type time-dependence is predicted. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:370 / 374
页数:5
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