Focused electron beam induced deposition of gold and rhodium

被引：18

作者：

Hoffmann, P ^{[1
]}

Utke, I ^{[1
]}

Cicoira, F ^{[1
]}

Dwir, B ^{[1
]}

Leifer, K ^{[1
]}

Kapon, E ^{[1
]}

Doppelt, P ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol Lausanne, Inst Appl Opt, CH-1015 Lausanne, Switzerland

来源：

MATERIALS DEVELOPMENT FOR DIRECT WRITE TECHNOLOGIES | 2000年 / 624卷

关键词：

D O I：

10.1557/PROC-624-171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron beam induced deposition with two noble metal precursors (Rhodium and Gold) having the same halogeno and trifluorophosphine ligands is presented. The deposit geometry of lines and freestanding bridges is discussed with respect to electron energy, beam shape, and backscattered electron distribution. Electron beam heating effects are estimated to be negligible in our deposition conditions. Using PF3AuCl, lines of percolating gold grains were deposited with electrical resistivities as low as 22 mu Omega cm at room temperature (Au: 2.2 mu Omega cm). Auger electron analysis shows about 60at% Ph in deposits obtained with [RhCl(PF3)(2)](2), however the resistivity of 1 Omega cm is high compared to 4.5 mu Omega cm of pure Rh.

引用

页码：171 / 177

页数：7

共 7 条

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