Memristive Behavior in Thin Anodic Titania

被引：88

作者：

Miller, Kyle ^{[1
]}

Nalwa, Kanwar S. ^{[1
]}

Bergerud, Amy ^{[1
]}

Neihart, Nathan M. ^{[1
]}

Chaudhary, Sumit ^{[1
]}

机构：

[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50014 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

基金：

美国国家科学基金会;

关键词：

Electrochemical anodization; memristor; titanium dioxide; RESISTANCE;

D O I：

10.1109/LED.2010.2049092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A common material in creating memristors is titanium dioxide (TiO2), grown by atomic layer deposition, sputtering, or sol-gel process. In this letter, we study the memristive behavior in thin TiO2 films fabricated by brief electrochemical anodization of titanium. The effects of different anodization times and annealing are explored. We discover that inherent oxygen-vacancies at the bottom Ti/TiO2 interface naturally lead to memristive switching in nonannealed films. Annealing induces extra oxygen vacancies near the top metal/oxide interface, which leads to symmetric and ohmic current-voltage characteristics with a collapse of memristive switching. No clear dependence on anodization time was observed for times between 1 s and 1 min.

引用

页码：737 / 739

页数：3

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